Toshiba Semiconductor and Storage
型号:
TPN19008QM,LQ
封装:
8-TSON Advance (3.1x3.1)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 80V 34A 8TSON
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.627
10
0.5396
100
0.373445
500
0.312075
1000
0.265592
请发送询价,我们将立即回复。
Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSX-H |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Base Product Number | TPN19008 |
Operating Temperature | 175°C |
Rds On (Max) @ Id, Vgs | 19mOhm @ 17A, 10V |
Power Dissipation (Max) | 630mW (Ta), 57W (Tc) |
Supplier Device Package | 8-TSON Advance (3.1x3.1) |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
Drain to Source Voltage (Vdss) | 80 V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 40 V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |