TPN1200APL,L1Q

Toshiba Semiconductor and Storage

型号:

TPN1200APL,L1Q

封装:

8-TSON Advance (3.1x3.1)

批次:

-

数据手册:

-

描述:

PB-F POWER MOSFET TRANSISTOR TSO

购买数量:

库存 : 1811

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.779

  • 10

    0.67355

  • 100

    0.466355

  • 500

    0.389633

  • 1000

    0.331607

  • 2000

    0.295336

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 300µA
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V
Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1855 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)