TPN1110ENH,L1Q
Toshiba Semiconductor and Storage
型号:
TPN1110ENH,L1Q
封装:
8-TSON Advance (3.1x3.1)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 200V 7.2A 8TSON
购买数量:
库存 : 10000
最小起订量: 1 最小递增量: 1
数量
单价
1
1.539
10
1.3756
100
1.07255
500
0.886008
1000
0.699476
2000
0.65285
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Base Product Number | TPN1110 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 3.6A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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