Toshiba Semiconductor and Storage
型号:
TPH2900ENH,L1Q
封装:
8-SOP Advance (5x5)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 200V 33A 8SOP
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
2.356
10
2.1204
100
1.70449
500
1.400395
1000
1.16032
2000
1.080302
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| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | TPH2900 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V |
| Power Dissipation (Max) | 78W (Tc) |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |