TPCC8105,L1Q(CM
Toshiba Semiconductor and Storage
型号:
TPCC8105,L1Q(CM
封装:
8-TSON Advance (3.3x3.3)
批次:
-
数据手册:
-
描述:
MOSFET P-CH 30V 23A 8TSON
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Base Product Number | TPCC8105 |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 11.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
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