首页 / 单 FET,MOSFET / TPC8A06-H(TE12LQM)

TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

型号:

TPC8A06-H(TE12LQM)

封装:

8-SOP (5.5x6.0)

批次:

-

数据手册:

描述:

MOSFET N-CH 30V 12A 8SOP

购买数量:

库存 : 请查询

请发送RFQ,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature Schottky Diode (Body)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 1mA
Base Product Number TPC8A06
Operating Temperature -
Rds On (Max) @ Id, Vgs 10.1mOhm @ 6A, 10V
Power Dissipation (Max) -
Supplier Device Package 8-SOP (5.5x6.0)
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)