TP65H150G4LSG

Transphorm

型号:

TP65H150G4LSG

品牌:

封装:

2-PQFN (8x8)

批次:

数据手册:

描述:

GAN FET N-CH 650V PQFN

购买数量:

库存 : 2981

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Transphorm
Series	-
Package	Cut Tape (CT)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	2-PowerTSFN
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 500µA
Base Product Number	TP65H150
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Power Dissipation (Max)	52W (Tc)
Supplier Device Package	2-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)