TP65H150BG4JSG-TR
Transphorm
型号:
TP65H150BG4JSG-TR
品牌:
封装:
8-PQFN (5x6)
批次:
-
数据手册:
-
描述:
GANFET N-CH 650V 13A QFN5X6
购买数量:
库存 : 3953
最小起订量: 1 最小递增量: 1
数量
单价
1
3.762
10
3.1597
100
2.55607
500
2.272096
1000
1.945486
2000
1.831876
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产品信息
参数信息
用户指南
| Mfr | Transphorm |
| Series | SuperGaN® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 6V |
| Power Dissipation (Max) | 83W (Tc) |
| Supplier Device Package | 8-PQFN (5x6) |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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