TP65H070G4PS

Transphorm

型号:

TP65H070G4PS

品牌:

封装:

TO-220AB

批次:

数据手册:

描述:

GANFET N-CH 650V 29A TO220

购买数量:

库存 : 1000

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Transphorm
Series	SuperGaN®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4.7V @ 700µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	85mOhm @ 18A, 10V
Power Dissipation (Max)	96W (Tc)
Supplier Device Package	TO-220AB
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	638 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)