TP65H050G4BS

Transphorm

型号:

TP65H050G4BS

品牌:

封装:

TO-263

批次:

数据手册:

描述:

650 V 34 A GAN FET

购买数量:

库存 : 388

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Transphorm
Series	SuperGaN®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 700µA
Base Product Number	TP65H050
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Power Dissipation (Max)	119W (Tc)
Supplier Device Package	TO-263
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)