TK8R2A06PL,S4X

Toshiba Semiconductor and Storage

型号:

TK8R2A06PL,S4X

封装:

TO-220SIS

批次:

-

数据手册:

-

描述:

MOSFET N-CH 60V 50A TO220SIS

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 300µA
Base Product Number TK8R2A06
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 11.4mOhm @ 8A, 4.5V
Power Dissipation (Max) 36W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 28.4 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)