Toshiba Semiconductor and Storage
型号:
TK5Q65W,S1Q
封装:
I-Pak
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 5.2A IPAK
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.1495
10
1.0279
100
0.80104
500
0.66177
1000
0.522443
2000
0.487616
5000
0.463239
10000
0.445826
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| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Base Product Number | TK5Q65 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.22Ohm @ 2.6A, 10V |
| Power Dissipation (Max) | 60W (Tc) |
| Supplier Device Package | I-Pak |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |