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TK5A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

型号:

TK5A60D(STA4,Q,M)

封装:

TO-220SIS

批次:

-

数据手册:

-

描述:

MOSFET N-CH 600V 5A TO220SIS

购买数量:

库存 : 50

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.4345

  • 10

    1.27965

  • 100

    0.9975

  • 500

    0.824011

  • 1000

    0.650541

  • 2000

    0.607174

  • 5000

    0.576812

  • 10000

    0.555132

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 1mA
Base Product Number TK5A60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)