TK4A80E,S4X

Toshiba Semiconductor and Storage

型号:

TK4A80E,S4X

封装:

TO-220SIS

批次:

-

数据手册:

-

描述:

PB-FPOWERMOSFETTRANSISTORTO-220S

购买数量:

库存 : 50

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.121

  • 10

    0.9196

  • 100

    0.71535

  • 500

    0.606309

  • 1000

    0.493905

  • 2000

    0.464949

  • 5000

    0.442814

  • 10000

    0.42237

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 400µA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)