Toshiba Semiconductor and Storage
型号:
TK3R2E06PL,S1X
封装:
TO-220
批次:
-
数据手册:
-
描述:
X35 PB-F POWER MOSFET TRANSISTOR
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.6055
10
1.33285
100
1.060865
500
0.897655
1000
0.761653
2000
0.723568
5000
0.696369
10000
0.673312
请发送询价,我们将立即回复。
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 700µA |
Base Product Number | TK3R2E06 |
Operating Temperature | 175°C |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
Power Dissipation (Max) | 168W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |