TK3R2E06PL,S1X

Toshiba Semiconductor and Storage

型号:

TK3R2E06PL,S1X

封装:

TO-220

批次:

-

数据手册:

-

描述:

X35 PB-F POWER MOSFET TRANSISTOR

购买数量:

库存 : 38

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.6055

  • 10

    1.33285

  • 100

    1.060865

  • 500

    0.897655

  • 1000

    0.761653

  • 2000

    0.723568

  • 5000

    0.696369

  • 10000

    0.673312

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 700µA
Base Product Number TK3R2E06
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 3.2mOhm @ 50A, 10V
Power Dissipation (Max) 168W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)