TK31J60W,S1VQ

Toshiba Semiconductor and Storage

型号:

TK31J60W,S1VQ

品牌:

封装:

TO-3P(N)

批次:

数据手册:

描述:

MOSFET N-CH 600V 30.8A TO3P

购买数量:

库存 : 5

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Base Product Number	TK31J60
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	88mOhm @ 15.4A, 10V
Power Dissipation (Max)	230W (Tc)
Supplier Device Package	TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)