TK210V65Z,LQ

Toshiba Semiconductor and Storage

型号:

TK210V65Z,LQ

品牌:

封装:

4-DFN-EP (8x8)

批次:

数据手册:

描述:

MOSFET N-CH 650V 15A 5DFN

购买数量:

库存 : 4858

最小起订量: 1 最小递增量: 1

数量

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参数信息

用户指南

Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 610µA
Base Product Number	TK210V65
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	210mOhm @ 7.5A, 10V
Power Dissipation (Max)	130W (Tc)
Supplier Device Package	4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)