TK200F04N1L,LXGQ

Toshiba Semiconductor and Storage

型号:

TK200F04N1L,LXGQ

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封装:

TO-220SM(W)

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描述:

MOSFET N-CH 40V 200A TO220SM

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Base Product Number	TK200F04
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	0.9mOhm @ 100A, 10V
Power Dissipation (Max)	375W (Tc)
Supplier Device Package	TO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs	214 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	14920 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	200A (Ta)