TK12A80W,S4X

Toshiba Semiconductor and Storage

型号:

TK12A80W,S4X

封装:

TO-220SIS

批次:

-

数据手册:

-

描述:

MOSFET N-CH 800V 11.5A TO220SIS

购买数量:

库存 : 40

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.85

  • 10

    2.39115

  • 100

    1.93439

  • 500

    1.719424

  • 1000

    1.472253

  • 2000

    1.386288

  • 5000

    1.33

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 570µA
Base Product Number TK12A80
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 450mOhm @ 5.8A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)