TK110N65Z,S1F

Toshiba Semiconductor and Storage

型号:

TK110N65Z,S1F

封装:

TO-247

批次:

-

数据手册:

-

描述:

POWER MOSFET TRANSISTOR TO-247(O

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.02mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
Power Dissipation (Max) 190W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 24A (Ta)