TK10J80E,S1E

Toshiba Semiconductor and Storage

型号:

TK10J80E,S1E

封装:

TO-3P(N)

批次:

-

数据手册:

-

描述:

MOSFET N-CH 800V 10A TO3P

购买数量:

库存 : 15

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.812

  • 10

    2.5232

  • 100

    2.067485

  • 500

    1.760008

  • 1000

    1.484346

  • 2000

    1.410132

  • 5000

    1.357113

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series π-MOSVIII
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number TK10J80
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Power Dissipation (Max) 250W (Tc)
Supplier Device Package TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)