TK090N65Z,S1F

Toshiba Semiconductor and Storage

型号:

TK090N65Z,S1F

封装:

TO-247

批次:

-

数据手册:

-

描述:

MOSFET N-CH 650V 30A TO247

购买数量:

库存 : 4

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    5.7855

  • 10

    4.86115

  • 100

    3.93262

  • 500

    3.495658

  • 1000

    2.993146

  • 2000

    2.818374

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.27mA
Base Product Number TK090N65
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 90mOhm @ 15A, 10V
Power Dissipation (Max) 230W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)