STP80N6F6
STMicroelectronics
库存 : 642
最小起订量: 1 最小递增量: 1
数量
单价
1
2.47
10
2.0501
100
1.63153
500
1.380521
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产品信息
参数信息
用户指南
| Mfr | STMicroelectronics |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Base Product Number | STP80N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7480 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
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