STP10N60M2
STMicroelectronics
库存 : 995
最小起订量: 1 最小递增量: 1
数量
单价
1
1.52
10
1.36325
100
1.095445
500
0.899973
1000
0.745702
2000
0.69427
5000
0.668553
10000
0.645268
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产品信息
参数信息
用户指南
| Mfr | STMicroelectronics |
| Series | MDmesh™ II Plus |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | STP10 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| Power Dissipation (Max) | 85W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
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