STB10N65K3
STMicroelectronics
型号:
STB10N65K3
封装:
D²PAK (TO-263)
批次:
-
数据手册:
描述:
MOSFET N-CH 650V 10A D2PAK
购买数量:
库存 : 901
最小起订量: 1 最小递增量: 1
数量
单价
1
2.1755
10
1.80975
100
1.440675
500
1.21904
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产品信息
参数信息
用户指南
| Mfr | STMicroelectronics |
| Series | SuperMESH3™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Base Product Number | STB10N6 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.6A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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