SSM6N815R,LF
Toshiba Semiconductor and Storage
型号:
SSM6N815R,LF
封装:
6-TSOP-F
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 100V 2A 6TSOPF
购买数量:
库存 : 16264
最小起订量: 1 最小递增量: 1
数量
单价
1
0.4085
10
0.3477
100
0.241965
500
0.188936
1000
0.153568
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 4V Drive |
| Power - Max | 1.8W (Ta) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Base Product Number | SSM6N815 |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 2A, 10V |
| Supplier Device Package | 6-TSOP-F |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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