SSM6N813R,LF
Toshiba Semiconductor and Storage
型号:
SSM6N813R,LF
封装:
6-TSOP-F
批次:
-
数据手册:
-
描述:
SMALL SIGNAL MOSFET DUAL N-CH VD
购买数量:
库存 : 8210
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5035
10
0.43035
100
0.299345
500
0.233738
1000
0.189981
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 1.5W (Ta) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Base Product Number | SSM6N813 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.5A, 10V |
| Supplier Device Package | 6-TSOP-F |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 242pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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