SSM6N7002KFU,LXH

Toshiba Semiconductor and Storage

型号:

SSM6N7002KFU,LXH

封装:

US6

批次:

-

数据手册:

-

描述:

SMOS 2 IN 1 DUAL NCH HIGH ESD PR

购买数量:

库存 : 8638

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.3515

  • 10

    0.24795

  • 100

    0.12521

  • 500

    0.11096

  • 1000

    0.086355

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101, U-MOSVII-H
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 285mW (Ta)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 250µA
Base Product Number SSM6N7002
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V
Supplier Device Package US6
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)