SSM6N35FE,LM

Toshiba Semiconductor and Storage

型号:

SSM6N35FE,LM

封装:

ES6

批次:

-

数据手册:

-

描述:

MOSFET 2N-CH 20V 0.18A ES6

购买数量:

库存 : 3450

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.361

  • 10

    0.26885

  • 100

    0.152095

  • 500

    0.100738

  • 1000

    0.077235

  • 2000

    0.067165

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 150mW
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Base Product Number SSM6N35
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Supplier Device Package ES6
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C 180mA