SSM6N16FE,L3F

Toshiba Semiconductor and Storage

型号:

SSM6N16FE,L3F

封装:

ES6

批次:

-

数据手册:

-

描述:

SMALL SIGNAL MOSFET N-CH X 2 VDS

购买数量:

库存 : 7725

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.342

  • 10

    0.23845

  • 100

    0.120365

  • 500

    0.098154

  • 1000

    0.072827

  • 2000

    0.061275

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 150mW (Ta)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Vgs(th) (Max) @ Id 1.1V @ 100µA
Base Product Number SSM6N16
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Supplier Device Package ES6
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)