SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

型号:

SSM6L09FUTE85LF

封装:

US6

批次:

-

数据手册:

-

描述:

MOSFET N/P-CH 30V 0.4A/0.2A US6

购买数量:

库存 : 5382

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.4465

  • 10

    0.31445

  • 100

    0.15865

  • 500

    0.140562

  • 1000

    0.109383

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 300mW
Configuration N and P-Channel
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Not For New Designs
Vgs(th) (Max) @ Id 1.8V @ 100µA
Base Product Number SSM6L09
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 700mOhm @ 200MA, 10V
Supplier Device Package US6
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C 400mA, 200mA