Toshiba Semiconductor and Storage
型号:
SSM6J503NU,LF
封装:
6-UDFNB (2x2)
批次:
-
数据手册:
-
描述:
MOSFET P-CH 20V 6A 6UDFNB
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.4275
10
0.34295
100
0.23332
500
0.175009
1000
0.131262
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| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Base Product Number | SSM6J503 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 32.4mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | 6-UDFNB (2x2) |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |