SSM6J422TU,LXHF

Toshiba Semiconductor and Storage

型号:

SSM6J422TU,LXHF

封装:

UF6

批次:

-

数据手册:

-

描述:

SMOS P-CH VDSS=-20V, VGSS=+6/-8V

购买数量:

库存 : 2567

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.38

  • 10

    0.323

  • 100

    0.224485

  • 500

    0.175294

  • 1000

    0.142481

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101, U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +6V, -8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max) 1W (Ta)
Supplier Device Package UF6
Gate Charge (Qg) (Max) @ Vgs 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)