Toshiba Semiconductor and Storage
型号:
SSM6J216FE,LF
封装:
ES6
批次:
-
数据手册:
-
描述:
MOSFET P-CHANNEL 12V 4.8A ES6
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.4465
10
0.3458
100
0.20729
500
0.1919
1000
0.130492
2000
0.120128
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Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Base Product Number | SSM6J216 |
Operating Temperature | 150°C |
Rds On (Max) @ Id, Vgs | 32mOhm @ 3.5A, 4.5V |
Power Dissipation (Max) | 700mW (Ta) |
Supplier Device Package | ES6 |
Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 12 V |
Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 12 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |