SSM6J216FE,LF

Toshiba Semiconductor and Storage

型号:

SSM6J216FE,LF

封装:

ES6

批次:

-

数据手册:

-

描述:

MOSFET P-CHANNEL 12V 4.8A ES6

购买数量:

库存 : 900

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.4465

  • 10

    0.3458

  • 100

    0.20729

  • 500

    0.1919

  • 1000

    0.130492

  • 2000

    0.120128

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Base Product Number SSM6J216
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 32mOhm @ 3.5A, 4.5V
Power Dissipation (Max) 700mW (Ta)
Supplier Device Package ES6
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 4.5 V
Drain to Source Voltage (Vdss) 12 V
Input Capacitance (Ciss) (Max) @ Vds 1040 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)