SQJ200EP-T1_GE3
Vishay Siliconix
型号:
SQJ200EP-T1_GE3
品牌:
封装:
PowerPAK® SO-8 Dual Asymmetric
批次:
-
数据手册:
描述:
MOSFET 2N-CH 20V 20A/60A PPAK SO
购买数量:
库存 : 3000
最小起订量: 1 最小递增量: 1
数量
单价
1
1.102
10
0.9861
100
0.76912
500
0.635341
1000
0.501581
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 27W, 48W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Base Product Number | SQJ200 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 16A, 10V |
| Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 975pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A, 60A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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