SPP15P10P H
Infineon Technologies
型号:
SPP15P10P H
封装:
PG-TO220-3-1
批次:
-
数据手册:
-
描述:
P-CHANNEL POWER MOSFET
购买数量:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, SIPMOS® |
| Package | Bulk |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 1.54mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 10.6A, 10V |
| Power Dissipation (Max) | 128W (Tc) |
| Supplier Device Package | PG-TO220-3-1 |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
