Infineon Technologies
型号:
SPD08P06PGBTMA1
封装:
PG-TO252-3
批次:
-
数据手册:
-
描述:
MOSFET P-CH 60V 8.83A TO252-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8455
10
0.7543
100
0.588145
500
0.485849
1000
0.383562
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| Mfr | Infineon Technologies |
| Series | SIPMOS® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SPD08P06 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 10A, 6.2V |
| Power Dissipation (Max) | 42W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6.2V |
| Current - Continuous Drain (Id) @ 25°C | 8.83A (Ta) |