SPB10N10LG

Infineon Technologies

型号:

SPB10N10LG

品牌:

封装:

PG-TO263-3-2

批次:

数据手册:

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 993

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 21µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	154mOhm @ 8.1A, 10V
Power Dissipation (Max)	50W (Tc)
Supplier Device Package	PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	444 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10.3A (Tc)