SIZF918DT-T1-GE3
Vishay Siliconix
型号:
SIZF918DT-T1-GE3
品牌:
封装:
8-PowerPair® (6x5)
批次:
-
数据手册:
描述:
MOSFET DUAL N-CH 30V POWERPAIR 6
购买数量:
库存 : 6000
最小起订量: 1 最小递增量: 1
数量
单价
1
1.4535
10
1.1894
100
0.924825
500
0.78394
1000
0.6386
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) |
| Configuration | 2 N-Channel (Dual), Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.3V @ 250µA |
| Base Product Number | SIZF918 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 56nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V, 2650pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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