SIZF906BDT-T1-GE3

Vishay Siliconix

型号:

SIZF906BDT-T1-GE3

封装:

8-PowerPair® (6x5)

批次:

-

数据手册:

描述:

DUAL N-CHANNEL 30 V (D-S) MOSFET

购买数量:

库存 : 29477

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.843

  • 10

    1.53425

  • 100

    1.220845

  • 500

    1.03303

  • 1000

    0.876508

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Configuration 2 N-Channel (Dual), Schottky
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Base Product Number SIZF906
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Supplier Device Package 8-PowerPair® (6x5)
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V, 165nC @ 10V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)