SIZ998BDT-T1-GE3
Vishay Siliconix
型号:
SIZ998BDT-T1-GE3
品牌:
封装:
8-PowerPair® (6x5)
批次:
-
数据手册:
-
描述:
DUAL N-CHANNEL 30-V (D-S) MOSFET
购买数量:
库存 : 17917
最小起订量: 1 最小递增量: 1
数量
单价
1
0.855
10
0.703
100
0.54644
500
0.463182
1000
0.377312
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Configuration | 2 N-Channel (Dual), Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SIZ998 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 46.7nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 2130pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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