SISS52DN-T1-GE3

Vishay Siliconix

型号:

SISS52DN-T1-GE3

封装:

PowerPAK® 1212-8SH

批次:

-

数据手册:

描述:

MOSFET N-CH 30V 47.1A/162A PPAK

购买数量:

库存 : 23697

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.969

  • 10

    0.7923

  • 100

    0.61655

  • 500

    0.522614

  • 1000

    0.425733

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET® Gen V
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +16V, -12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8SH
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Base Product Number SISS52
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Supplier Device Package PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 47.1A (Ta), 162A (Tc)