SISS26LDN-T1-GE3
Vishay Siliconix
型号:
SISS26LDN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8S
批次:
-
数据手册:
描述:
MOSFET N-CH 60V 23.7A/81.2A PPAK
购买数量:
库存 : 300
最小起订量: 1 最小递增量: 1
数量
单价
1
1.1875
10
0.97185
100
0.75563
500
0.640471
1000
0.52173
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SISS26 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 15A, 10V |
| Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 81.2A (Tc) |
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