SISH410DN-T1-GE3
Vishay Siliconix
型号:
SISH410DN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8SH
批次:
-
数据手册:
描述:
MOSFET N-CH 20V 22A/35A PPAK
购买数量:
库存 : 4210
最小起订量: 1 最小递增量: 1
数量
单价
1
0.988
10
0.8056
100
0.62662
500
0.531164
1000
0.432687
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SH |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SISH410 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 35A (Tc) |
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