SISH112DN-T1-GE3
Vishay Siliconix
型号:
SISH112DN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8SH
批次:
-
数据手册:
描述:
MOSFET N-CH 30V 11.3A PPAK
购买数量:
库存 : 5997
最小起订量: 1 最小递增量: 1
数量
单价
1
1.3585
10
1.11435
100
0.8664
500
0.734407
1000
0.598253
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SH |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Base Product Number | SISH112 |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 17.8A, 10V |
| Power Dissipation (Max) | 1.5W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2610 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
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