SISF02DN-T1-GE3
Vishay Siliconix
型号:
SISF02DN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8SCD
批次:
-
数据手册:
描述:
MOSFET DUAL N-CH 25V 1212-8
购买数量:
库存 : 26
最小起订量: 1 最小递增量: 1
数量
单价
1
1.425
10
1.1647
100
0.90573
500
0.767714
1000
0.625376
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SCD |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Base Product Number | SISF02 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 7A, 10V |
| Supplier Device Package | PowerPAK® 1212-8SCD |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 30.5A (Ta), 60A (Tc) |
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