SISA35DN-T1-GE3
Vishay Siliconix
型号:
SISA35DN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8
批次:
-
数据手册:
描述:
MOSFET P-CH 30V 10A/16A PPAK
购买数量:
库存 : 16479
最小起订量: 1 最小递增量: 1
数量
单价
1
0.475
10
0.36955
100
0.22173
500
0.205333
1000
0.139631
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SISA35 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9A, 10V |
| Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 16A (Tc) |
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