SIS890ADN-T1-GE3
Vishay Siliconix
型号:
SIS890ADN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8
批次:
-
数据手册:
描述:
MOSFET N-CH 100V 7.6A/24.7A PPAK
购买数量:
库存 : 1905
最小起订量: 1 最小递增量: 1
数量
单价
1
0.874
10
0.75525
100
0.52288
500
0.436886
1000
0.37183
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SIS890 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 25.5mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 24.7A (Tc) |
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