SIS590DN-T1-GE3

Vishay Siliconix

型号:

SIS590DN-T1-GE3

封装:

PowerPAK® 1212-8 Dual

批次:

-

数据手册:

描述:

COMBO N- & P-CHANNEL 100 V (D-S)

购买数量:

库存 : 27

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.9025

  • 10

    0.73625

  • 100

    0.57266

  • 500

    0.485393

  • 1000

    0.3954

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Configuration N and P-Channel
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number SIS590
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Supplier Device Package PowerPAK® 1212-8 Dual
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 265pF 2 50V, 325pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)