SIHD6N62ET1-GE3

Vishay Siliconix

型号:

SIHD6N62ET1-GE3

品牌:

封装:

TO-252AA

批次:

数据手册:

描述:

MOSFET N-CH 620V 6A TO252AA

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用户指南

Mfr	Vishay Siliconix
Series	E
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIHD6
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	900mOhm @ 3A, 10V
Power Dissipation (Max)	78W (Tc)
Supplier Device Package	TO-252AA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Drain to Source Voltage (Vdss)	620 V
Input Capacitance (Ciss) (Max) @ Vds	578 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)